View IRFHS9301PBF-15_8250803.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet power mosfet notes through are on page 2 applications charge and discharge switch for battery application system/load switch features and benefits v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 37 m q g (typical) 13 nc i d (@t c = 25c) -8.5 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ -10v i d @ t c = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @ t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 1.3 max. -6.0 -10 -52 20 -30 -4.8 -13 -8.5 v w a c g 3 s d2 d1 4s 5d 6d top view d 2mm x 2mm pqfn

! " form quantity irfhs9301trpbf pqfn 2mm x 2mm tape and reel 4000 irfhs9301tr2pbf pqfn 2mm x 2mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note features benefits low r dson ( ) 1) 1.0 ) 1

! "
repetitive rating; pulse width limited by max. junction temperature. current limited by package. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. . g d s static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) ??? 30 37 ??? 52 65 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v gs(th) gate threshold voltage coefficient ??? -4.8 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 9.3 ??? ??? s q g total gate charge ??? 6.9 ??? nc v ds = -15v,v gs = -4.5v,i d = - 7.8a q g total gate charge ??? 13 ??? q gs gate-to-source charge ??? 2.1 ??? q gd gate-to-drain charge ??? 3.9 ??? r g gate resistance ??? 17 ??? t d(on) turn-on delay time ??? 12 ??? t r rise time ???80??? t d(off) turn-off delay time ??? 13 ??? t f fall time ??? 25 ??? c iss input capacitance ??? 580 ??? c oss output capacitance ??? 125 ??? c rss reverse transfer capacitance ??? 79 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 30 45 ns q rr reverse recovery charge ??? 110 170 nc thermal resistance parameter units r ) r ) r r 10) ??? 90 c/w conditions -52 ??? ??? max. 13 42 v ds = -24v, v gs = 0v conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -7.8a v gs = -4.5v, i d = -6.2a v ds = v gs , i d = -25 a m a t j = 25c, i f = -7.8a, v dd = -15v di/dt = 280/ s t j = 25c, i s = -7.8a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = -7.8a v ds = -10v, i d = -7.8a v ds = -24v, v gs = 0v, t j = 125c v dd = -15v, v gs = -4.5v i d = -7.8a v ds = -15v v gs = -20v v gs = 20v v gs = -10v nc ns pf r g = 2.0 see figs. 19a & 19b ? = 1.0khz v gs = 0v v ds = -25v 60 static drain-to-source on-resistance a ??? ??? ??? ??? -8.5 typ. na
#

! "
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -8.0v -5.0v -4.5v -3.5v -3.3v -3.0v bottom -2.8v 60 s pulse width tj = 150c -2.8v 1 2 3 4 5 6 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -7.8a v gs = -10v 0 2 4 6 8 1012141618 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds= -6v i d = -7.8a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -8.0v -5.0v -4.5v -3.5v -3.3v -3.0v bottom -2.8v 60 s pulse width tj = 25c -2.8v

! "
fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.6 0.8 1.0 -v sd , source-to-drain voltage (v) 1.0 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -25ua 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 i d , d r a i n c u r r e n t ( a ) limited by package 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc
$

! "
fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 14 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

?
?
?

?

? !"#"" ?

$
%% ? "#""& # + - + + + - - -
fig 15.

for p-channel hexfet power mosfets 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 p o w e r ( w ) 0 5 10 15 20 -v gs, gate -to -source voltage (v) 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -7.8a t j = 25c t j = 125c 0 5 10 15 20 25 30 -i d , drain current (a) 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -10v vgs = -4.5v
%

! "
fig 16a. gate charge test circuit fig 16b. gate charge waveform fig 17b. switching time waveforms fig 17a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s ' ( 1 ) $
0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f
&

! "
pqfn package details pqfn part marking note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
'

! "
pqfn tape and reel core tape cover tape (width) 5.4 mm tolerance +/- 0.1 mm 9.5 mm +/- 0.1 mm width remark: - dimension above are typical dimensions. - cover tape thickness is 0.048mm +/- 0.005mm. - surface resistivity 10e5 < rs <10e9. table 2: note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
(

! "
qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per i p c/j e de c j - s t d- 020d ??? ) rohs c ompliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial ?? (per jedec jes d47f ??? guidelines ) revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated data sheet based on corporate template. 5/21/2014 ? 1 . 101

▲Up To Search▲

Price & Availability of IRFHS9301PBF-15

	To Download IRFHS9301PBF-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .